The photodetector is designed to exhibit an optimized frequency response in both power and phase. It is ideally suited for OC-768/STM-256 long haul systems. The high power capability of up to 10 dBm allows for use of optical amplification at the detector input, and results in a high output voltage swing of up to 1V avoiding the need for electrical amplification. The photodetector is optimized for dual operations at 1310 nm and 1550 nm.

A waveguide integrated pin diode provides an excellent linearity, high responsivity and a superior flatness of the RF response. An integrated biasing guarantees a highly reliable component.

The photodetector contains a waveguide-integrated pin-photodiode (PD), designed to exhibit optimized high frequency performance in both, amplitude and phase. A linear response up to an optical input power of 10 dBm is a feature of these modules, enabling to drive subsequent decision circuits of communication systems directly. The pin-photodiode with on-chip integrated bias network in conjunction with a blocking capacitor for AC coupling is the best choice for 44 Gb/s applications.

The photodetector consists of a well-established, waveguide-integrated single photodiode chip, designed to exhibit an optimized frequency response in both power and phase. Due to experienced RF packaging, the pulse response shows almost no ringing. Our integrated on-chip spot size converter leads to a high responsivity and ensures reliability and robustness of the FT-DV. An advantage of the waveguide structure is the unsurpassed high-power behavior with linear response up to an optical input power of 10 dBm. For short pulses, an output voltage swing of more than 1 Vpp can be achieved without any degradation of the pulse response. FT-DVs contain a unique on-chip integrated bias network and ensure undisturbed frequency response from DC to the 3 dB cut-off frequency.

The balanced photodetector consists of two 50 GHz waveguide-integrated photodiodes on one single chip. As a single-balanced photodetector the configuration ensures excellent uniformity of the paired photodiodes and their integrated biasing network. Due to optimized alignment of the waveguide and photodiode design, a linear frequency response is guaranteed even at high optical powers. An integrated 50Ω termination allows excellent matching with the electrical output signal. Tailored configurations are available, e.g. FT-DV dual pair and quad sets, including fiber matching and optical connector customization.

The FT-DV is a compact module that is based on an advanced waveguide photodetector chip integrated with a Bias-Tee. The HP-PD utilizes a mode-converting tapered waveguide for efficient fiber-to-chip coupling and a 1×4 Multi-Mode Interference (MMI) Coupler. The optical signal is split by the MMI coupler into 4 equal parts and then it is fed into an array of 4 photodiodes which are connected in-parallel. It has a responsivity of 0.52 A/W @ 1550 nm and a high saturation photocurrent of 35 mA @ 20 GHz. The HP-PD is capable of delivering 6 dBm RF output power @ 20 GHz and 3 dBm @ 50 GHz. The device exhibits a high linearity with typical OIP3 values above 20 dBm at a frequency of 40 GHz.