Description
Large area, high sensitivity photo-diode for use in infrared instrumentation and sensing applications. High spectral response in the region 800 nm to 1700 nm. The photosensitive area is 5mm in diameter. Planar-passivated device structure.Photosensitive surfaces are broadband AR coated.We use high transmission Glass window material.
Features
● Top illumination planar PD
● Lager active diameter
● Less than 5ns response time,High reliability
ABSOLUTE MAXIMUM RATINGS (T=25°C)
Parameter |
Rating |
Units |
Operating voltage |
15 |
V |
Forward current |
10 |
mA |
Operating temperature |
-50~+100 |
℃ |
storage temperature |
-55~+125 |
℃ |
Power dissipation |
100 |
mW |
Soldering temperature |
260℃ |
℃ |
Soldering time |
10 |
S |
OPTICAL AND ELECTRICAL CHARACTERISTICS (T=25°C)
Parameters |
Sym |
Test conditions |
Min |
Typ |
Max |
Unit |
Response Spectrum |
λ |
- |
900-1700 |
nm |
||
Active diameter |
φ |
- |
5000 |
μm |
||
Reponsivity |
Re |
VR=5V,λ=1.31μm,φe=10μm |
0.85 |
|
|
A/W |
VR=5V,λ=1.55μm,φe=10μm |
0.90 |
|
|
|||
Max linear power |
φs |
VR=5V,λ=1.55μm |
10 |
|
|
mW |
Response time |
ts |
VR=5V,RL=50Ω,f=1MHz |
|
3 |
5 |
ns |
Total capacitance |
C |
VR=5V,f=1MHz |
|
40 |
60 |
pF |
Dark current |
ID |
VR=5V,φe=0 |
|
1 |
5 |
nA |
Shunt impedance |
Rsh |
VR=10mV |
75 |
|
|
MΩ |
Reverse breakdown voltage |
VBR |
IR=10μA |
40 |
|
|
V |
Applications
● Space communication,
● Laser fusee,
● Alarming
Important Notice
Performance figures, data and any illustrative material provided in this data sheet are typical and must be specifically confirmed in writing by F-tone Networks before they become applicable to any particular order or contract. In accordance with the F-tone Networks policy of continuous improvement specifications may change without notice.
The publication of information in this data sheet does not imply freedom from patent or other protective rights of F-tone Networks or others. Further details are available from any F-tone Networks sales representative.